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P057AAT

N-Channel Enhancement Mode MOSFET



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P057AAT pdf
P057AAT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 5.8mΩ @VGS = 10V
ID
129A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
129
82
410
Avalanche Current
IAS 60
Avalanche Energy
L = 0.3mH
EAS
557
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
192
77
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Limited by package.
2Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.65
63
UNITS
°C / W
Ver 1.0
1 2012/4/16



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P057AAT pdf
P057AAT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
ID(ON)
RDS(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 100A
75
2.0 2.5 4.0
±250
1
10
129
4.7 5.8
Forward Transconductance1
gfs
VDS = 25V, ID = 50A
100
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 60V, VGS = 10V, ID = 80A
VDD = 40V,
ID @ 40A, VGS = 10V, RGS = 2.5Ω
12500
1090
629
3.8
223
64
80
40
60
130
50
4
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 100A, VGS = 0V
Reverse Recovery Time
trr
90
Reverse Recovery Charge
Qrr
260
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Limited by package.
129
1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



Part Number P057AAT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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