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P0550ETF

N-Channel Enhancement Mode MOSFET



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P0550ETF pdf
P0550ETF / P0550ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.55Ω @VGS = 10V
ID
5A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
5
3.2
20
2.5
31.2
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
32
12
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.9
62.5
UNITS
°C / W
REV 1.0
1 2015/6/11



No Preview Available !

P0550ETF pdf
P0550ETF / P0550ETFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
500
234
±100
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
IDSS
RDS(ON)
VDS = 500V, VGS = 0V,TC = 25 °C
VDS = 400V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 2.5A
1
10
1.15 1.55
Forward Transconductance1
gfs
VDS = 10V, ID = 2.5A
6.8
DYNAMIC
Input Capacitance
Ciss
565
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
71
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD =400V, VGS = 10V, ID = 5A
VDD = 300V, ID = 5A,
RG= 25Ω
12
18
3
7.2
15
24
74
37
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
5
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
226
1.7
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2 2015/6/11



Part Number P0550ETF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 6 Pages
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