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P0550ATF

N-Channel Enhancement Mode MOSFET


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P0550ATF pdf
P0550ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.5Ω @VGS = 10V
ID
5A
TO-220F
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
EAS
5
3
15
31
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
33
13
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting ,TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.6
62.5
UNITS
°C / W
REV 1.1
1 2014-4-30



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P0550ATF pdf
P0550ATF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
500
2.5
4.5
±100
Gate Voltage Drain Current
IDSS
VDS = 500V, VGS = 0V, TC = 25 °C
VDS = 500V, VGS = 0V , TC = 100 °C
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2.5A
1.35 1.5
Forward Transconductance1
gfs
VDS = 10V, ID = 2.5A
4
DYNAMIC
Input Capacitance
Ciss
691
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
93
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 250V, ID = 2.5A, VGS = 10V
VDD = 250V, ID = 2.5A, RG =25Ω
12
12.1
3.7
3.6
13
22
28
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
5
1.5
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A , dlF/dt = 100A / μS, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
1450
10
2Independent of operating temperature.
3Limited only by maximum temperature allowed.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
mC
REV 1.1
2 2014-4-30



Part Number P0550ATF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 7 Pages
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