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UNIKC
UNIKC


P0550AT

N-Channel Enhancement Mode MOSFET


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P0550AT pdf
P0550AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.5Ω @VGS = 10V
ID
5A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
IAS
EAS
5
3
15
5
128
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
74
30
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , starting TJ = 25˚C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.68
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



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P0550AT pdf
P0550AT
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 500V, VGS = 0V , TC = 25 °C
VDS = 500V, VGS = 0V , TC = 100 °C
500
2.5
4.5
±100
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2.5A
1.35 1.5
Forward Transconductance1
gfs
VDS = 10V, ID = 2.5A
4
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 250V, ID = 2.5A, VGS = 10V
VDD = 250V, ID = 2.5A, RG=25Ω
691
93
12
12.1
3.7
3.6
13
22
28
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 5 A, dlF/dt = 100A / mS
Qrr VGS = 0V
1450
10
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
5
1.5
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



Part Number P0550AT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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