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UNIKC
UNIKC


P0510AT

N-Channel Enhancement Mode MOSFET



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P0510AT pdf
P0510AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
5.5mΩ @VGS = 10V
ID
132A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±25
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
132
83
350
Avalanche Current
IAS 36
Avalanche Energy
L = 1mH
EAS 648
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
192
77
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 111A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
0.65
°C / W
62.5
REV 1.0
1 2015/10/15



No Preview Available !

P0510AT pdf
P0510AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
100
V
234
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 15A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
4.4 7.5
4 5.5
50 S
DYNAMIC
Input Capacitance
Ciss
6716
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
851 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
555
1Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=7V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V,ID = 20A
VDD = 50V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
146
113
nC
30
56
98
194
nS
170
88
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
132 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dls/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
53 nS
98 nC
2Independent of operating temperature.
3Package limitation current is 111A.
REV 1.0
2 2015/10/15



Part Number P0510AT
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 8 Pages
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