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P0470ETFS

N-Channel Enhancement Mode MOSFET



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P0470ETFS pdf
P0470ETF / P0470ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.8Ω @VGS = 10V
ID
4A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
4
2.6
16
2
20
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
54
22
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.3
62.5
UNITS
°C / W
REV 1.0
1 2017/1/23



No Preview Available !

P0470ETFS pdf
P0470ETF / P0470ETFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
700
234
±100
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
IDSS
RDS(ON)
VDS = 700V, VGS = 0V, TC = 25 °C
VDS = 560V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 2A
1
10
2.2 2.8
Forward Transconductance1
gfs
VDS = 10V, ID = 2A
7.7
DYNAMIC
Input Capacitance
Ciss
661
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
63
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD =560V, VGS = 10V, ID = 4A
VDD = 350V, ID = 4A,
RG= 6Ω
8
14
2.9
3.2
37
13.5
17
12.3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
4
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
354
2.4
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2 2017/1/23



Part Number P0470ETFS
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 9 Pages
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