http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




NIKO-SEM
NIKO-SEM


P0470ETFS

N-Channel Enhancement Mode Field Effect Transistor



No Preview Available !

P0470ETFS pdf
NIKO-SEM
N-Channel Enhancement Mode
P0470ETF:TO-220F
P0470ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.8Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
700
±30
4
2.6
16
2
20
54
22
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
2.3
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
LIMITS
UNIT
MIN TYP MAX
700
V
23
4
±100 nA
F-48-3



No Preview Available !

P0470ETFS pdf
NIKO-SEM
N-Channel Enhancement Mode
P0470ETF:TO-220F
P0470ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
Gate Voltage Drain Current
VDS = 700V, VGS = 0V , TC = 25 °C
IDSS
VDS = 560V, VGS = 0V , TC = 100 °C
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 10V, ID = 2A
DYNAMIC
2.2
7.7
Input Capacitance
Ciss
661
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
63
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 560V, ID =4A, VGS = 10V
VDD = 350V, ID =4A, RG= 6Ω
8
14
2.9
3.2
37
13.5
17
12.3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF =4A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 380 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
354
2.4
1
10
2.8
4
1
A
Ω
S
pF
nC
nS
A
V
nS
uC
REV 1.0
2
F-48-3



Part Number P0470ETFS
Description N-Channel Enhancement Mode Field Effect Transistor
Maker NIKO-SEM - NIKO-SEM
Total Page 4 Pages
PDF Download
P0470ETFS pdf
Download PDF File
P0470ETFS pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
P0470ETF N-Channel Enhancement Mode Field Effect Transistor P0470ETF
NIKO-SEM
PDF
P0470ETF N-Channel Enhancement Mode MOSFET P0470ETF
UNIKC
PDF
P0470ETFS N-Channel Enhancement Mode Field Effect Transistor P0470ETFS
NIKO-SEM
PDF
P0470ETFS N-Channel Enhancement Mode MOSFET P0470ETFS
UNIKC
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components