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NIKO-SEM
NIKO-SEM


P0465CTFS

N-Channel Enhancement Mode Field Effect Transistor


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P0465CTFS pdf
NIKO-SEM
N-Channel Enhancement Mode P0465CTF:TO-220F
Field Effect Transistor
P0465CTFS:TO-220FS
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.7Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
100% UIS tested
LIMITS
650
±30
4
2.4
15
2
20
24
9.8
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH, starting TJ = 25˚C
TYPICAL
MAXIMUM
5.1
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±30V
REV 1.0
1
LIMITS
UNIT
MIN TYP MAX
650
2.5 3.2 4.5
V
±100 nA
D-46-3



No Preview Available !

P0465CTFS pdf
NIKO-SEM
N-Channel Enhancement Mode P0465CTF:TO-220F
Field Effect Transistor
P0465CTFS:TO-220FS
Halogen-Free & Lead-Free
Gate Voltage Drain Current
VDS = 650V, VGS = 0V , TC = 25 °C
IDSS
VDS = 520V, VGS = 0V , TC = 100 °C
10
A
100
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 10V, ID = 2A
DYNAMIC
2.2 2.7 Ω
2.6 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
521
59 pF
12
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 520V, ID = 4A, VGS = 10V
VDD = 325V, ID = 4A, RG= 25Ω
14
3.5 nC
6
28
60
nS
91
75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
4A
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 4A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
374 nS
3.1 uC
REV 1.0
2
D-46-3



Part Number P0465CTFS
Description N-Channel Enhancement Mode Field Effect Transistor
Maker NIKO-SEM - NIKO-SEM
Total Page 4 Pages
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