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P0465CTF

N-Channel Enhancement Mode MOSFET



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P0465CTF pdf
P0465CTF/P0465CTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.7Ω @VGS = 10V
ID
4A
TO-220F
TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 , 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
4
2.4
15
2
20
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
24
9.8
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V ,L=10mH. starting TJ = 25 °C .
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5.1
62.5
UNITS
°C / W
REV 1.1
1 2015/7/31



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P0465CTF pdf
P0465CTF/P0465CTFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
650
2.5 3.2 4.5
±100
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 650V, VGS = 0V , TC = 25 °C
VDS = 520V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 2A
VDS = 10V, ID = 2A
10
100
2.2 2.7
2.6
DYNAMIC
Input Capacitance
Ciss
521
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
59
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD = 520V, ID = 4A, VGS = 10V
VDD = 325V, ID = 4A, RG=25Ω
12
14
3.5
6
28
60
91
75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF =4A, VGS = 0V
4
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF =4A, dIF/dt=100A/ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
374
3.1
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
UNITS
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
mC
REV 1.1
2 2015/7/31



Part Number P0465CTF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 9 Pages
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