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P0465CIS

N-Channel Enhancement Mode MOSFET


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P0465CIS pdf
P0465CIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.6Ω @VGS = 10V
ID
4A
TO-251(IS)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current12
Avalanche Current3
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
4
2.5
15
2
Avalanche Energy3
EAS 20
Power Dissipation
TC= 25 °C
TC= 100°C
PD
54
21
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , L = 10mH ,starting TJ = 25˚C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.3
62.5
UNITS
°C / W
REV 1.1
1 2015/7/31



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P0465CIS pdf
P0465CIS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
650
2.5 3.3 4.5
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100 nA
Gate Voltage Drain Current
IDSS
VDS = 650V, VGS = 0V , TC = 25 °C
VDS =520V, VGS = 0V, TC = 100°C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2A
2.1 2.6
Ω
Forward Transconductance1
gfs
VDS =15V, ID =2A
2.5 S
DYNAMIC
Input Capacitance
Ciss
512
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
52
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Qg
13
Gate-Source Charge2
Qgs VDD = 520V, ID = 4A, VGS = 10V
3.8
Gate-Drain Charge2
Qgd
4.3
Turn-On Delay Time2
td(on)
27
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VGS = 0V , VDD = 350V,
ID = 4A, RG= 25Ω
59
90
Fall Time2
tf
74
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
4
1
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
374 nS
2.1 uC
REV 1.1
2 2015/7/31



Part Number P0465CIS
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 8 Pages
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