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UNIKC
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P0465ATF

N-Channel Enhancement Mode MOSFET


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P0465ATF pdf
P0465ATF / P0465ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.5Ω @VGS = 10V
ID
4A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
EAS
4
2.2
16
23.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD=50V,L=10mH,starting TJ=25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5
62.5
UNITS
°C / W
Ver 1.0
1 2012/8/3



No Preview Available !

P0465ATF pdf
P0465ATF / P0465ATFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
650
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 10mA
234
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.5 3.4 4.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100
Gate Voltage Drain Current
IDSS
VDS = 650V, VGS = 0V, TC = 25 °C
VDS = 520V, VGS = 0V , TC= 100 °C
25
250
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 2A
2.5
Forward Transconductance1
gfs
VDS = 25V, ID = 2A
3.8
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
828
69
Reverse Transfer Capacitance
Crss
3
Gate Resistance
Rg VDS = 0V, VGS = 0V,f=1MHz
1.95
Total Gate Charge2
Qg
14
Gate-Source Charge2
Qgs VDD = 520V, ID= 4A, VGS=10V
4
Gate-Drain Charge2
Qgd
3
Turn-On Delay Time2
td(on)
35
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 325V, ID = 4A, RG =25Ω
80
140
Fall Time2
tf
84
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A , dlF/dt = 100A / μS
364
3.3
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4
1.5
UNIT
V
nA
mA
Ω
S
pF
Ω
nC
nS
A
V
nS
μC
Ver 1.0
2 2012/8/3



Part Number P0465ATF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 6 Pages
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