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UNIKC
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P0460BTF

N-Channel Enhancement Mode MOSFET


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P0460BTF pdf
P0460BTF / P046BTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.6Ω @VGS = 10V
ID
4A
TO-220F
TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
4
1.5
16
Avalanche Current
IAS 4
Avalanche Energy
L = 10mH
EAS
81
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



No Preview Available !

P0460BTF pdf
P0460BTF / P046BTFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
600
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.5 3.5 4.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100
Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V, TJ = 25 °C
VDS = 480V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
RDS(ON)
VGS = 10V, ID = 2A
2.6
Forward Transconductance1
gfs
VDS = 10V, ID = 2A
3
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V, ID = 4A, RG = 6Ω
Fall Time2
tf
623
98
24
15
47
45
56
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A , dlF/dt = 100A / μS
322
3.2
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
15
1.6
UNIT
V
nA
mA
Ω
S
pF
nS
A
V
nS
μC
Ver 1.0
2 2012/4/16



Part Number P0460BTF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 6 Pages
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