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P0460ATF

N-Channel Enhancement Mode MOSFET


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P0460ATF pdf
P0460ATF(S)
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2Ω @VGS = 10V
ID
4A
TO-220F
TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
EAS
4
2.5
20
20
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
27
11
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed .
3VDD = 50V,L=10mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.5
62.5
UNITS
°C / W
Ver 2.0
1 2012/4/23



No Preview Available !

P0460ATF pdf
P0460ATF(S)
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
600
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.5
4.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100
Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V, TC = 25 °C
VDS = 600V, VGS = 0V , TC = 100 °C
25
250
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 15V, ID = 2A
1.85 2
5
DYNAMIC
Input Capacitance
Ciss
780
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
56
Reverse Transfer Capacitance
Crss
12
Total Gate Charge2
Qg
19.4
Gate-Source Charge2
Qgs VDD = 300V, ID = 4A, VGS = 10V
4.3
Gate-Drain Charge2
Qgd
8.7
Turn-On Delay Time2
td(on)
23
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V, ID = 4A, RG =25Ω
28
44
Fall Time2
tf
44
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 10A , dlF/dt = 100A / μS,
Qrr VGS = 0V
324
2.4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4
1.5
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 2.0
2 2012/4/23



Part Number P0460ATF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 6 Pages
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