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UNIKC
UNIKC


P0403BDA

N-Channel Enhancement Mode MOSFET


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P0403BDA pdf
P0403BDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.6mΩ @VGS = 10V
ID
77A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TC= 25 °C
TC= 100 °C
ID
IDM
77
50
200
Avalanche Current
IAS 49
Avalanche Energy
L=0.1mH
EAS
120
Power Dissipation
TC= 25 °C
TC= 100°C
PD
50
20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
2.5 °C / W
REV 1.0
1 2014/4/30



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P0403BDA pdf
P0403BDA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 100°C
VDS = 5V, VGS = 10V
30
1
200
1.5 3
±100
1
10
V
nA
mA
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =4.5V, ID =20A
VGS =10V, ID =20A
4.8 5.9
3.3 4.6
Forward Transconductance1
gfs
VDS =5V, ID =20A
68 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
2980
456
304
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
0.65
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,VGS = 10V,
ID = 20A
VDS = 0.5V(BR)DSS,
ID20A, VGS = 10V, RGEN =6Ω
57
10
15
16
20
42
18
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
77 A
1.3 V
25 nS
12 nC
REV 1.0
2 2014/4/30



Part Number P0403BDA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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