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NIKO-SEM
NIKO-SEM


P0306BT

N-Channel Field Effect Transistor



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P0306BT pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0306BT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 3.4mΩ
ID
162A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2,3
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
±20
162
102
300
119
708
178
71
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3Package limitation current is 110A.
TYPICAL
MAXIMUM
0.7
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
60
1.3 1.8 2.3
V
±100 nA
1
A
10
REV 1.0
E-25-4
1



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P0306BT pdf
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0306BT
TO-220
Halogen-Free & Lead-Free
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 20A
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
DYNAMIC
3 4.5
mΩ
2.6 3.4
80 S
Input Capacitance
Ciss
5825
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
1162
Reverse Transfer Capacitance
Crss
385
Gate Resistance
Rg VGS = 0V, VDS = 0V ,f = 1MHz
1.4
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V, VGS = 10V,
ID = 20A
VDD = 60V
ID 20A, VGS = 10V, RGEN = 6Ω
124
67
15
35
25
65
60
62
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A,VGS = 0V
172
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 20A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
3Package limitation current is 110A.
60
127
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
E-25-4
2



Part Number P0306BT
Description N-Channel Field Effect Transistor
Maker NIKO-SEM - NIKO-SEM
Total Page 4 Pages
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