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UNIKC
UNIKC


P0303BKA

N-Channel Enhancement Mode MOSFET



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P0303BKA pdf
P0303BKA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3.5mΩ @VGS = 10V
ID
89A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
89
56
180
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
19
12
Avalanche Current
IAS 59
Avalanche Energy
L = 0.1mH
EAS
174
TC = 25 °C
48
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
19
2.1
TA = 70 °C
1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
Ver 1.0
1 2012/5/16



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P0303BKA pdf
P0303BKA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case
Junction-to-Ambient2
Steady-State
Steady-State
RqJC
RqJA
2.6
°C / W
57
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C. The value in any given application depends on the user's specific board design.
3Package limitation current is 78A.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.0 1.5 3.0
±100
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 16A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
1
10
4.6 6.5
2.9 3.5
65
DYNAMIC
Input Capacitance
Ciss
2840
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Coss
Crss
Rg
Qg(VGS =10V)
Qg(VGS =4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 20A
VDS = 15V,
ID @ 1A, VGS = 10V, RGEN = 6Ω
443
280
0.7
53
26
9.4
12.6
20.4
8.1
113
15.7
UNIT
V
nA
mA
S
pF
Ω
nC
nS
Ver 1.0
2 2012/5/16



Part Number P0303BKA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 6 Pages
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