http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




UNIKC
UNIKC


P0260ATF

N-Channel Enhancement Mode MOSFET


No Preview Available !

P0260ATF pdf
P0260ATF / P0260ATFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
4.4Ω @VGS = 10V
ID
2A
TO-220F
TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
EAS
2
1.1
7
5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
23
9
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5.5
62.5
UNITS
°C / W
Ver 2.0
1 2012/4/18



No Preview Available !

P0260ATF pdf
P0260ATF / P0260ATFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V, TC = 25 °C
VDS = 600V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 1A
VDS = 10V, ID = 1A
600
2.5
4.5
±100
25
250
3.7 4.4
1.9
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
342
47
Reverse Transfer Capacitance
Crss
6
Total Gate Charge2
Qg
7.8
Gate-Source Charge2
Qgs VDD = 300V, VGS = 10V, ID = 1.2A
3.1
Gate-Drain Charge2
Qgd
2.3
Turn-On Delay Time2
td(on)
15
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V, ID = 2A, RG = 25Ω
30
28
Fall Time2
tf
36
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current3
IS
Forward Voltage1
Reverse Recovery Time
VSD IF = 2A, VGS = 0V
trr IF = 2A, dlF/dt = 100A / μS
780
Reverse Recovery Charge
Qrr
VGS = 0V
3.8
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
2
1.5
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
uC
Ver 2.0
2 2012/4/18



Part Number P0260ATF
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 6 Pages
PDF Download
P0260ATF pdf
Download PDF File
P0260ATF pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
P0260AD N-Channel Enhancement Mode MOSFET P0260AD
UNIKC
PDF
P0260AI N-Channel Enhancement Mode MOSFET P0260AI
UNIKC
PDF
P0260AT N-Channel Enhancement Mode MOSFET P0260AT
UNIKC
PDF
P0260ATF N-Channel Enhancement Mode MOSFET P0260ATF
UNIKC
PDF
P0260ATFS N-Channel Enhancement Mode MOSFET P0260ATFS
UNIKC
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components