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UNIKC
UNIKC


P0160AI

N-Channel Enhancement Mode MOSFET


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P0160AI pdf
P0160AI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
12Ω @VGS = 10V
ID
1A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
IAS
EAS
1
0.6
3
1.4
10
Power DissipationA
TC = 25 °C
TC = 100 °C
PD
28
0.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 50V , Starting TJ = 25 °C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.53
110
UNITS
°C / W
Ver 1.0
1 2012/4/16



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P0160AI pdf
P0160AI
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 0.5A
600
2.5
3.6 4.5
±100
1
10
8.2 12
Forward Transconductance1
gfs
VDS = 10V, ID = 0.5A
1
DYNAMIC
Input Capacitance
Ciss
168
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
58
Reverse Transfer Capacitance
Crss
3
Total Gate Charge2
Qg
4.4
Gate-Source Charge2
Qgs VDD = 480V, ID = 1A, VGS = 10V
2.7
Gate-Drain Charge2
Qgd
0.8
Turn-On Delay Time2
td(on)
10
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V, ID @ 1A, RG= 25Ω
20
16
Fall Time2
tf
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 2A, dlF/dt = 100A / mS VGS = 0V
180
0.5
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
1
1.4
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



Part Number P0160AI
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC - UNIKC
Total Page 5 Pages
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