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OH10008

GaAs Hall Device


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OH10008 pdf
GaAs Hall Devices
OH10008
GaAs Hall Device
Magnetic sensor
Unit : mm
I Features
Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T)
Input resistance: typ. 750 k
Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C
Mini type (4-pin) package with positioning projection. Allowing
automatic insertion through the magazine package.
41
32
0.6 ± 0.1 1.45 ± 0.05 0.8 ± 0.1
2.85 ± 0.25
5
5 0 to 0.15
I Applications
Thin and small hall motors (Applicable to CD, VD, VCR, FDD, and
other portable equipment)
Automotive equipment
Measurement equipment
Applicable to wide-varying field (OA equipment, etc.)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Control voltage
Power dissipation
Operating ambient temperature
Storage temperature
VC 12
PD 100
Topr 30 to +125
Tstg 55 to +125
Unit
V
mW
°C
°C
0.5 ± 0.1
φ 1.0 ± 0.025
1 : VC Input (+) side
2 : VH Output (−) side
3 : VC Input (−) side
4 : VH Output (+) side
Mini Type Package (4-pin) with positioning projection
Marking Symbol: B
I Electrical Characteristics Ta = 25°C
Parameter
Hall voltage*1
Unequilibrium ratio*2, 4
Input resistance
Output resistance
Temperature coefficient of hall voltage
Symbol
VH
VHO
RIN
ROUT
β
Temperature coefficient of input
resistance
α
Linearity of hall voltage*3
γ
Conditions
VC = 6 V, B = 0.1 T
VC = 6 V, B = 0 T
IC = 1 mA, B = 0 T
IC = 1 mA, B = 0 T
IC = 6 mA, B = 0.1 T
IC = 1 mA, B = 0 T
IC = 6 mA, B = 0.1 T/0.5 T
Min Typ Max Unit
80 105 130 mV
±19 mV
0.5 0.75
k
1.5 5
k
0.06 %/°C
0.3 %/°C
2%
Note)
*1 : VH =
VH++VH
2
*2 : Output pin voltage under no-load (B = 0) condition
*3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured
respectively at B = 0.1 T and 0.5 T to their average. That is,
γ=
KH5KH1
1/2(KH1+KH5)
(the cumulative sensitivity KH =
*4 : VHO rank classification
VH
IC B
)
Class
VHO (mV)
A
+19 to +9
B
+12 to +2
C
+5 to 5
D
2 to 12
E
9 to 19
1



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OH10008 pdf
OH10008
GaAs Hall Devices
PD Ta
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
VH B
1 600
VC = 6 V
1 400 Ta = 25°C
1 200
1 000
800
600
400
200
0
0 0.2 0.4 0.6 0.8 1.0
Magnetic flux density B (T)
VH Ta
240
B = 1 kG
IC = 6 mA
200
160
120
80
40
0
40
0
40 80 120
Ambient temperature Ta (°C)
VH IC
320
B = 1 kG
280 Ta = 25°C
240
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16
Control current IC (mA)
RIN Ta
1 600
B=0
1 400 IC = 1 mA
1 200
1 000
800
600
400
200
0
40
0
40 80 120
Ambient temperature Ta (°C)
VH VC
320
B = 1 kG
280 Ta = 25°C
240
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16
Control voltage VC (V)
I Typical Drive Circuit
+9 V
1
42
3
9 V
2
+9 V
+
9 V
V +V



Part Number OH10008
Description GaAs Hall Device
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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