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OH10003

GaAs Hall Device


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OH10003 pdf
GaAs Hall Devices
OH10003
GaAs Hall Device
Magnetic sensor
I Features
Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
Input resistance: typ. 0.85 k
Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C
Sealed in the Mini type (4-pin) package. Allowing automatic
insertion through the taping and the magazine package.
0.65 ± 0.15
+ 0.2
2.8 0.3
+ 0.2
1.5 0.3
Unit : mm
0.65 ± 0.15
0.5 R
41
32
I Applications
Various hall motor (VCR, phonograph, VD, CD, and FDD)
Automotive equipment
Industrial equipment
Applicable to wide-varying field (OA equipment, etc.)
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Control voltage
Power dissipation
Operating ambient temperature
Storage temperature
VC 12
V
PD 150 mW
Topr 30 to +125
°C
Tstg 55 to +125
°C
0.4 ± 0.2
1 : VH Output (−) side
2 : VC Input (−) side
3 : VH Output (+) side
4 : VC Input (+) side
Mini Type Package (4-pin)
Marking Symbol: 3
I Electrical Characteristics Ta = 25°C
Parameter
Hall voltage*1, 4
Unequilibrium ratio*2, 4
Input resistance
Output resistance
Temperature coefficient of hall voltage
Temperature coefficient of input
resistance
Symbol
VH
VHO/VH
RIN
ROUT
β
α
Conditions
VC = 6 V, B = 0.1 T
VC = 6 V, B = 0 T/B = 0.1 T
IC = 1 mA, B = 0 T
IC = 1 mA, B = 0 T
IC = 6 mA, B = 0.1 T
IC = 1 mA, B = 0 T
Min Typ Max Unit
130 150 170 mV
±12 %
0.50 0.852
k
5 k
0.06 %/°C
0.3 %/°C
Linearity of hall voltage*3
γ IC = 6 mA, B = 0.1 T/0.5 T
2
Note)
*1 :
VH =
VH++VH
2
*2 : Unequilibrium ratio is a percentage of VHO with respect to VH.
*3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are
measured respectively at B = 0.1 T and 0.5 T to their average. That is,
γ=
KH5KH1
1/2(KH1+KH5)
(the cumulative sensitivity KH =
*4 : VH, VHO/VH rank classification
VH
IC B
)
%
Class
HQ
HR
VH (mV) 130 to 158 142 to 170
VHO/VH (%)
5 to +5
Marking Symbol 3HQ
3HR
IQ IR
130 to 158 142 to 170
+2 to +12
3IQ 3IR
KQ KR
130 to 158 142 to 170
2 to 12
3KQ
3KR
1



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OH10003 pdf
OH10003
GaAs Hall Devices
PD Ta
200
180
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
1 600
VC = 6 V
1 400 Ta = 25°C
VH B
1 200
1 000
800
600
400
200
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Magnetic flux density B (T)
VH Ta
240
B = 1 kG
IC = 6 mA
200
160
120
80
40
0
40
0
40 80 120
Ambient temperature Ta (°C)
VH IC
320
B = 1 kG
280 Ta = 25°C
240
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16
Control current IC (mA)
RIN Ta
1 600
B=0
1 400 IC = 1 mA
1 200
1 000
800
600
400
200
0
40
0
40 80 120
Ambient temperature Ta (°C)
VH VC
320
B = 1 kG
280 Ta = 25°C
240
200
160
120
80
40
0
0 2 4 6 8 10 12 14 16
Control voltage VC (V)
I Typical Drive Circuit
+9 V
4
31
2
9 V
2
+9 V
+
9 V
V +V



Part Number OH10003
Description GaAs Hall Device
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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