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OPTO DIODE
OPTO DIODE


OD-880W

HIGH-POWER GaAlAs IR EMITTERS


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OD-880W pdf
HIGH-POWER GaAlAs IR EMITTERS
OD-880W
GLASS
.006 HIGH
MAX
.015
1.00
MIN.
ANODE
(CASE)
.209
.220
.183 .152
.187 .156
.100
.041
.017
.098
.112
.143
.150
CATHODE
.036
45°
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Wide emission angle to cover a large area
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Total Power Output, Po
Radiant Intensity, Ie
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
Fall Time
IF = 100mA
IF = 50mA
IF = 100mA
IR = 10μA
VR = 0V
MIN
18
70
5
TYP
20
16
880
80
80
1.55
30
17
0.5
0.5
MAX
1.9
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
μsec
μsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10μs, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C TO 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
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OD-880W pdf
HIGH-POWER GaAlAs IR EMITTERS
THERMAL DERATING CURVE
200
180
160
INFINITE
HEAT SINK
140
120
NO
HEAT SINK
100
80
60
40
20
0
25
50 75
AMBIENT TEMPERATURE (°C)
100
DEGRADATION CURVE
100
90
IF = 20mA
IF = 50mA
80
MAXIMUM PEAK PULSE CURRENT
10
t = 10μs
1 t = 100μs
t = 500μs
0.1
Ip
0.01
0.01
t
D
=
t
T
T
0.1 1 10
DUTY CYCLE, D (%)
RADIATION PATTERN
100
80
60
100
70
60
50
101
TCASE = 25°C
NO PRE BURN-IN PERFORMED
IF = 100mA
102 103
STRESS TIME, (hrs)
104
105
FORWARD I-V CHARACTERISTICS
4
3
2
1
0
01 2 34
FORWARD VOLTAGE, VF (volts)
SPECTRAL OUTPUT
100
5
6
40
20
0
–100 –80 –60 –40 –20 0 20 40 60 80 100
BEAM ANGLE, θ(deg)
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–50
–25 0 25 50 75
AMBIENT TEMPERATURE (°C)
100
POWER OUTPUT vs FORWARD CURRENT
1,000
80
100
60
40
20
0
750
10
800 850 900 950
WAVELENGTH, λ(nm)
1,000
1
10
DC
PULSE
10μs, 100Hz
100 1,000
FORWARD CURRENT, IF (mA)
10,000
OD-880W
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com



Part Number OD-880W
Description HIGH-POWER GaAlAs IR EMITTERS
Maker OPTO DIODE - OPTO DIODE
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