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OptoDiode
OptoDiode


OD-880-C

HIGH-POWER GaAlAs IR EMITTER CHIPS


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OD-880-C pdf
HIGH-POWER GaAlAs IR EMITTER CHIPS
OD-880-C
EMITTING
SURFACE
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GOLD
CONTACTS
.014
.014
.006
N .003
P .005
FEATURES
• High reliability LPE GaAlAs IRLED chips
• Graded-bandgap LED structure for high radiant power
output
• 880nm peak emission
• Good ohmic contacts (gold alloys)
• Good bondability
All dimensions are nominal values in inches unless
otherwise specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Peak Emission Wavelength, LP
Spectral Bandwidth at 50%, $L
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
TEST CONDITIONS
IF = 100mA
IF = 20mA
IF = 50mA
IF = 100mA
IR = 10MA
VR = 0V
Rise Time
Fall Time
MIN
8
5
TYP
14
2
880
80
1.55
30
17
0.5
0.5
MAX
1.9
UNITS
mW
nm
nm
Volts
Volts
pF
Msec
Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C
Power Dissipation
Continuous Forward Current
Peak Forward Current (10Ms, 300 Hz)
Reverse Voltage
Storage and Operating Temperature Range
Maximum Junction Temperature
190mW
100mA
3A
5V
-65°C to 150°C
150°C
The exact performance data depends on your package configuration and technique. Data listed in this specification is
for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days
from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com



Part Number OD-880-C
Description HIGH-POWER GaAlAs IR EMITTER CHIPS
Maker OptoDiode - OptoDiode
Total Page 1 Pages
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