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NanoAmp Solutions
NanoAmp Solutions


N08T1630CXB

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit



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N08T1630CXB pdf
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08T1630CxBwww.DataSheet4U.com
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512Kx16 bit
Overview
The N08T1630CxB is an integrated memory
device containing a low power 8 Mbit SRAM built
using a self-refresh DRAM array organized as
512,288 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N08T1630CxB is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard BGA and TSOP2
packages compatible with other standard 512Kb x
16 SRAMs.
Features
• Single Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
70µA at 3.0V (Max)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast access time
55ns address access option
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green package option for TSOP and BGA
Product Family
Part Number Package Type
Operating
Temperature
N08T1630C2BZ
48 - BGA
N08T1630C2BZ2 Green 48 - BGA
N08T1630C1BT
44- TSOP2
N08T1630C1BT2 Green 44- TSOP2
-40oC to +85oC
Pin Configuration (Top View)
Power
Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Max @ 3.0V
Max
2.7V - 3.6V
55/70ns @
2.7V
70 µA
3 mA @ 1MHz
Pin Descriptions
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A18
A17
A16
A15
A14
1 44
2 43
3 42
4 41
5 40
6 39
7
8
44 Pin
38
37
9
10
TSOP2
36
35
11 34
12 33
13 32
14 31
15 30
16 29
17 28
18 27
19 26
20 25
21 24
22 23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
A8
A9
A10
A11
A12
A13
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 VSS A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Ball BGA
6 x 8 mm
Pin Name
A0-A18
WE
CE1
CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable 1 Input
Chip Enable 2 Input (BGA only)
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1



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N08T1630CXB pdf
NanoAmp Solutions, Inc.
Functional Block Diagram
N08T1630CxBwww.DataSheet4U.com
Address
Inputs
A0 - A18
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
512K
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE1 CE21 WE OE UB LB
I/O0 - I/O152
MODE
POWER
HXXXXX
XLXXXX
L HX XHH
L H L X4 L2 L2
L H H L L2 L2
L H H H L2 L2
High Z
High Z
High Z
Data In
Data Out
High Z
Standby3
Standby3
Standby3
Write
Read
Active
Standby
Standby
Standby
Active
Active
Active
1. CE2 only applies to BGA package.
2. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
3. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
4. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2



Part Number N08T1630CXB
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
Maker NanoAmp Solutions - NanoAmp Solutions
Total Page 9 Pages
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N08T1630CXB 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit N08T1630CXB
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