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AMI SEMICONDUCTOR
AMI SEMICONDUCTOR


N08M1618L1A

8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit



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N08M1618L1A pdf
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
N08M1618L1A
Advance wInwfwo.DramtaShaeteti4oUn.com
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
512K × 16 bit
Overview
Features
The N08M1618L1A is an integrated memory
device intended for non life-support medical
applications. This device is a 8 megabit memory
organized as 524,288 words by 16 bits. The device
is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology with
reliability inhancements for medical users. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. This device is optimal for
various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in a JEDEC standard BGA package.
• Dual voltage for Optimum Performance:
Vccq - 2.3 to 3.6 Volts
Vcc - 1.4 to 2.2 Volts
• Very low standby current
0.5µA at 1.8V and 37 deg C
• Very low operating current
1.0mA at 1.8V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.8V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.2V
• Special Processing to reduce Soft Error Rate
(SER)
• Automatic power down to standby mode
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply
Speed
Standby
Operating
Current (ISB), Current (Icc),
Max Max
N08M1618L1AB
N08M1618L1AW
48 - BGA
Wafer
-40oC to +85oC
2.3V-3.6V(VCCQ)
1.4V-2.2V(VCC)
85ns @ 1.7V
150ns @ 1.4V
20 µA
2.5 mA @
1MHz
Pin Configuration
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9 A10 A11 NC
48 Pin BGA (top)
8 x 10 mm
Pin Descriptions
Pin Name
A0-A18
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
VCC
VSS
VCCQ
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O pins only
Not Connected
Stock No. 23211-03 9/21/06
ADVANCE INFORMATION
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
1



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N08M1618L1A pdf
AMI Semiconductor, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
N08M1618L1A
Advance wInwwfo.DratmaShaeetti4oU.ncom
Address
Inputs
A4 - A18
Page
Address
Decode
Logic
CE1
CE2
WE
OE
UB
LB
Control
Logic
32K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
I/O8 - I/O15
Functional Description
CE1 CE2 WE OE UB LB
I/O0 - I/O151
MODE
POWER
HXXXXX
XLXXXX
XXXXHH
L H L X3 L1 L1
L H H L L1 L1
L H H H L1 L1
High Z
High Z
High Z
Data In
Data Out
High Z
Standby2
Standby2
Standby2
Write3
Read
Active
Standby
Standby
Standby
Active -> Standby4
Active -> Standby4
Standby4
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
4. The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from
any expernal influence.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Stock No. 23211-03 9/21/06
ADVANCE INFORMATION
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
2



Part Number N08M1618L1A
Description 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit
Maker AMI SEMICONDUCTOR - AMI SEMICONDUCTOR
Total Page 11 Pages
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N08M1618L1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit N08M1618L1A
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N08M1618L1A 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K X 16 bit N08M1618L1A
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