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Renesas Electronics Components Datasheet


N0604N

N-CHANNEL MOSFET


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Data Sheet
N0604N
N-channel MOSFET
60 V, 82 A, 6.5 mΩ
R07DS0850EJ0100
Rev.1.00
Aug 27, 2012
Description
The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
Low input capacitance
Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V)
High current
ID(DC) = ±82 A
RoHS Compliant
Ordering Information
Part No.
N0604N-S19-AY 1
Lead Plating
Pure Sn (Tin)
Tube
Packing
50 p/tube
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-220
1.9 g TYP.
Absolute Maximum Ratings (TA = 25°C, all terminals are connected)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 2
Single Avalanche Energy 2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
60
±20
±82
±200
116
1.5
150
55 to +150
35
125
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance 2
Rth(ch-A)
1.08
83.3
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 0 V, L = 100 μH
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 1 of 6
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N0604N
Chapter Title
Electrical Characteristics (TA = 25°C, all terminals are connected)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S–D)
trr
Qrr
MIN.
2.0
30
TYP.
5.1
4150
310
165
24
8
64
7
75
21
21
38
39
MAX.
1
±100
4.0
6.5
1.5
Unit
μA
nA
V
S
mΩ
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 5 V, ID = 41 A
VGS = 10 V, ID = 41 A
pF VDS = 25 V,
pF VGS = 0 V,
pF f = 1 MHz
ns VDD = 30 V, ID = 41 A,
ns VGS = 10 V,
ns RG = 0 Ω
ns
nC VDD = 48 V,
nC VGS = 10 V,
nC ID = 82 A
V IF = 82 A, VGS = 0 V
ns IF = 82 A, VGS = 0 V,
nC di/dt = 100 A/μ s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0850EJ0100 Rev.1.00
Aug 27, 2012
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/



Part Number N0604N
Description N-CHANNEL MOSFET
Maker Renesas - Renesas
Total Page 8 Pages
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