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NanoAmp Solutions
NanoAmp Solutions


N04Q16YYC2B

4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ



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N04Q16YYC2B pdf
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N04Q16yyC2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
Features
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0oC
to +70oC for the lowest power and is also available
in the industrial range of -40oC to +85oC. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
Product Options
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
2.3V - 2.7V
2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
2.5V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
Part Number
I/O
Typical
Standby
Current
Vcc
(V)
VccQ
(V)
Speed
Typical
Operating
(nS) Operating Current Temperature
N04Q1612C2Bx-15C
x16
50nA
1.2 1.2, 1.8, 3 150ns 0.4 mA @ 1MHz
N04Q1618C2Bx-15C
N04Q1618C2Bx-70C
x16
x16
50nA
200nA
150ns
1.8 1.8, 2.5, 3
70ns
0.4 mA @ 1MHz
0.6 mA @ 1MHz 0oC to +70oC
N04Q1625C2Bx-15C
x16
800nA 2.5 2.5, 3 150ns 0.6 mA @ 1MHz
N04Q1630C2Bx-70C
x16
800nA
3.0
3.0
70ns 2.2mA @ 1MHz
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
1



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N04Q16YYC2B pdf
NanoAmp Solutions, Inc.
Pin Configurations (4Mb)
A4
A3
A2
A1
A0
CE1
I/O0
I/O1
I/O2
I/O3
VCCQ
VSSQ
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1 PIN
2 ONE
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP II
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
CE2
A8
A9
A10
A11
A17
N04Q16yyC2B
Advance wInwwfo.DramtaShaeetti4oU.ncom
123456
A LB OE A0 A1 A2 CE2
B I/O8 UB A3 A4 CE1 I/O0
C I/O9 I/O10 A5 A6 I/O1 I/O2
D VSSQ I/O11 A17 A7 I/O3 VCC
E VCCQ I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H NC A8 A9 A10 A11 NC
48 Pin BGA (top)
Pin Descriptions
Pin Name
A0-A17
WE
CE1
CE2
OE
LB
UB
I/O0-I/O7
I/O8-I/O15
VCC
VCCQ
VSS
VSSQ
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable 1 Input
Chip Enable 2 Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Lower Byte Data Input/Output
Upper Byte Data Input/Output
Core Power
Power for I/O
Core Ground
Ground for I/O
Not Connected
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
2



Part Number N04Q16YYC2B
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ
Maker NanoAmp Solutions - NanoAmp Solutions
Total Page 13 Pages
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