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NanoAmp Solutions
NanoAmp Solutions


N02M0818L2A

2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit



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N02M0818L2A pdf
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02M0818L2Awww.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
Features
The N02M0818L2A is an integrated memory
device intended for implanted life-support (Class 3)
medical applications. This device comprises a 2
Mbit Static Random Access Memory organized as
262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N02M0818L1A, which is intended for
non life-support (Class 1 and 2) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. The
N02M0818L2A is optimal for various applications
where low-power is critical such as implanted
pacemaker devices. The device can operate over a
very wide temperature range of -20oC to +60oC
and is available in die form as well as in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
Product Family
• Single Wide Power Supply Range
1.3 to 2.3 Volts
• Very low standby current
200nA typical at 2.1V and 37 deg C
• Very low operating current
1 mA at 2.0V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.0V
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
N02M0818L2AN 32 - STSOP I
N02M0818L2AD Known Good Die -20oC to +60oC
1.3V - 2.3V
100ns @ 1.65V
500ns @ 1.3V
Standby
Current
(ISB)
450nA @
2.3V
Operating
Current (Icc),
Max
2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
A11 1
A9 2
A8 3
A13 4
WE 5
CE2 6
A15 7
Vcc 8
A17 9
A16 10
A14 11
A12 12
A7 13
A6 14
A5 15
A4 16
N02M0818L2A
STSOP
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 Vss
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1



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N02M0818L2A pdf
NanoAmp Solutions, Inc.
N02M0818L2Awww.DataSheet4U.com
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
VCCQ(opt)
16K Page
x 16 word
x 8 bit
RAM
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
CE1
CE2
WE
OE
Control
Logic
Functional Description
CE1 CE2 WE
OE
I/O0 - I/O7
MODE
POWER
HXXX
XLXX
L H L X2
High Z
High Z
Data In
Standby1
Standby1
Write2
Standby
Standby
Active
L HH L
L HHH
Data Out
High Z
Read
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2



Part Number N02M0818L2A
Description 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
Maker NanoAmp Solutions - NanoAmp Solutions
Total Page 8 Pages
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