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NanoAmp Solutions
NanoAmp Solutions


N02L083WC2A

2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit



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N02L083WC2A pdf
NanoAmp Solutions, Inc.
N02L083WC2A670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
www.DataSheet4U.com
2Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 8 bit
Overview
Features
The N02L083WC2A is an integrated memory
device containing a 2 Mbit Static Random Access
Memory organized as 262,144 words by 8 bits. The
device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. The
N02L083WC2A is optimal for various applications
where low-power is critical such as battery backup
and hand-held devices. The device can operate
over a very wide temperature range of -40oC to
+85oC and is available in JEDEC standard
packages compatible with other standard 256Kb x
8 SRAMs
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number
Package Type
Operating
Power
Temperature Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
N02L083WC2AT
32 - TSOP I
N02L083WC2AN
N02L083WC2AT2
32 - STSOP I
-40oC to +85oC
32 - TSOP I Green
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
N02L083WC2AN2 32 - STSOP I Green
Pin Configuration
Pin Descriptions
A11
A9
A8
A13
WE
CE2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N02L083WC2A
STSOP-I, TSOP-I
32 OE
31 A10
30 CE1
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 VSS
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
Pin Name
A0-A17
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
(DOC# 14-02-015 REV E ECN# 01-0998)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1



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N02L083WC2A pdf
NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A3
Word
Address
Decode
Logic
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
16K Page
x 16 word
x 8 bit
RAM Array
CE1
CE2
WE
OE
Control
Logic
N02L083WC2Awww.DataSheet4U.com
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Functional Description
CE1 CE2 WE
OE
I/O0 - I/O7
MODE
POWER
HXXX
XLXX
L H L X2
High Z
High Z
Data In
Standby1
Standby1
Write2
Standby
Standby
Active
L HH L
L HHH
Data Out
High Z
Read
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
(DOC# 14-02-015 REV E ECN# 01-0998)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2



Part Number N02L083WC2A
Description 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit
Maker NanoAmp Solutions - NanoAmp Solutions
Total Page 10 Pages
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