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NanoAmp Solutions
NanoAmp Solutions


N01L083WC2A

Ultra-low Power SRAMs



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NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N01L083WC2A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
128Kx8 bit
Overview
Features
The N01L083WC2A is an integrated memory
device containing a 1 Mbit Static Random Access
Memory organized as 131,072 words by 8 bits. The
device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The base design is the same as
NanoAmp’s N01L1618N1A, which is processed to
operate at lower voltages. The device operates
with two chip enable (CE1 and CE2) controls and
output enable (OE) to allow for easy memory
expansion. The N01L083WC2A is optimal for
various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 8 SRAMs
Product Family
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
0.8mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Very fast output enable access time
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
Part Number
Package
Type
N01L083WC2AT 32 - TSOP I
N01L083WC2AN 32 - STSOP I
N01L083WC2AS 32 SOP
Pin Configuration
Operating
Temperature
-40oC to +85oC
Power
Supply (Vcc)
Speed
Standby
Operating
Current (ISB), Current (Icc),
Typical
Typical
2.3V - 3.6V
55ns @ 2.7V
70ns @ 2.3V
2 µA
2 mA @ 1MHz
Pin Descriptions
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-Pin
STSOP-I
TSOP-I
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
NC 1
A16 2
32 VCC
31 A15
A14 3
30 CE2
A12 4
29 WE
A7 5
28 A13
A6 6
27 A8
A5 7
26 A9
A4 8
25 A11
A3 9
24 OE
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
VSS 16
23 A10
22 CE1
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
32-Pin
SOP
Pin Name
A0-A16
WE
CE1, CE2
OE
I/O0-I/O7
VCC
VSS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
Stock No. 23033-05 12/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1



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N01L083WC2A pdf
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NanoAmp Solutions, Inc.
Functional Block Diagram
Address
IAn0p-utAs3
Word
Address
Decode
Logic
Address
Inputs
A4 - A16
Page
Address
Decode
Logic
8K Page
x 16 word
x 8 bit
RAM Array
CE1
CE2
WE
OE
Control
Logic
N01L083WC2A
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Functional Description
CE1 CE2 WE
OE
I/O0 - I/O7
MODE
POWER
HXXX
XLXX
L H L X2
High Z
High Z
Data In
Standby1
Standby1
Write2
Standby
Standby
Active
L HH L
L HHH
Data Out
High Z
Read
Active
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
I/O Capacitance
CIN VIN = 0V, f = 1 MHz, TA = 25oC
CI/O VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
Min Max Unit
8 pF
8 pF
Stock No. 23033-05 12/02
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2



Part Number N01L083WC2A
Description Ultra-low Power SRAMs
Maker NanoAmp Solutions - NanoAmp Solutions
Total Page 11 Pages
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