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MRUS51S

Micro power Built-in IC ultra-minimum MR sensor



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MRUS51S pdf
New Product DATA SHEET
MRUS51S
Micro power Built-in IC ultra-minimum MR sensor
MR Sensor
1.FEATURES
High-sensitivity (1.5mT(typ.) ) & Ultra-minimum Size & Low source supply
*Micro power (6µW(typ):Vcc=1.8V) 1.Dimension (Unit:mm)
(suited for battery-operation)
*Ultra-small size
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MR(Magneto-resistance)sensor
z Volume and mounting area are
70% smaller than MRSS22L.
* Height is about 50 % lower than
MRSS22L.
*Operating in one way magnetic field
*Operating with independent pole
Gnd
Vcc
(easily manufacture)
*Superior Temperature stability
1.4
*Lead free goods
Out
Max0.55
2.Fundamental Operation
2-1.Direction of Magnetic Field
2-2.Circuit Block
2-3.Performance Characteristics (25+3 ˚C)
Operating require
Condition
When power switch is ON
H = 0 mT (Magnetic Flux Density)
When magnetic field is applied
H 2.2 mT (Magnetic Flux Density)
When magnetic field is applied
H 0.5 mT (Magnetic Flux Density)
Output
Voltage
Hi-level
Lo-level
Hi-level



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MRUS51S pdf
3.Performance
New Product DATA SHEET
MRUS51S
MR Sensor
3-1.Operating Conditions Recommended
(Ta = 25+3 ˚C unless otherwise specified)
Item
Output
Condition
Min Std Max Unit
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Supply Voltage
-
Supply Current
Ambient
Temperature
Output Voltage
Operating Magnetic
Field
-
-
VOH
VOL
Hi-level
output
Hon
Lo-level
output
Hoff
- 1.6 1.8 3.5 V
Vcc=1.8V
- 3 - µA
-
Vcc=1.8V
Iout=1mA
VCC=1.8V
Iout=-1mA
25+3˚C
-40 25 85
ºC
1.6 -
-
V
- - 0.2 V
-
1.5 2.2
(1.4) (1.8) mT(*1
25+3˚C
0.5
(0.4)
-
-
*1) 1 [mT](SI) = 10 [G] (CGS)
(kA/m)
3-2.Absolute Maximum Ratings
(Ta = 25+3 C˚ unless otherwise specified)
Item Condition Specifications
Supply Voltage
Storage
Temperature
-
-
6.0
-40 ~ +125
Unit
V
˚C
The products and product specifications described in this material are subject to change without notice
for reasons of modification or improvement.



Part Number MRUS51S
Description Micro power Built-in IC ultra-minimum MR sensor
Maker NEC - NEC
Total Page 3 Pages
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