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  NEC Electronic Components Datasheet  


MC-4R64CEE6B

Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT



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PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R64CEE6B, 4R64CEE6C
Direct RambusTM DRAM RIMMTM Module
64M-BYTE (32M-WORD x 16-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R64CEE6B, 4R64CEE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices
(µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of
Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using
conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
184 edge connector pads with 1mm pad spacing
64 MB Direct RDRAM storage
Each RDRAM® has 32 banks, for 128 banks total on module
Gold plated contacts
RDRAMs use Chip Scale Package (CSP)
Serial Presence Detect support
Operates from a 2.5 V supply
Low power and powerdown self refresh modes
Separate Row and Column buses for higher efficiency
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14537EJ1V1DS00 (1st edition)
Date Published November 1999 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
1999



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MC-4R64CEE6B, 4R64CEE6C
Order information
Part number
Organization I/O Freq. RAS access time
MHz
ns
Package
Mounted devices
MC-4R64CEE6B - 845
MC-4R64CEE6B - 745
MC-4R64CEE6B - 653
MC-4R64CEE6C - 845
MC-4R64CEE6C - 745
MC-4R64CEE6C - 653
32M x 16
800
711
600
800
711
600
45 184 edge connector pads RIMM 4 pieces of
45 with heat spreader
µPD488448FB
53 Edge connector : Gold plated FBGA (D2BGATM) package
45 4 pieces of
45 µPD488448FF
53 FBGA (µBGA®) package
2 Preliminary Data Sheet M14537EJ1V1DS00



Part Number MC-4R64CEE6B
Description Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT
Maker NEC - NEC
Total Page 16 Pages
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