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MC-458CB646

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE



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MC-458CB646 pdf
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-458CB646
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
5 Description
The MC-458CB646EFB and MC-458CB646PFB are 8,388,608 words by 64 bits synchronous dynamic RAM module
on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and access time from CLK
Part number
/CAS latency
MC-458CB646EFB-A80
MC-458CB646EFB-A10
5 MC-458CB646PFB-A80
5 MC-458CB646PFB-A10
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Clock frequency
(MAX.)
125 MHz
100 MHz
100 MHz
77 MHz
125 MHz
100 MHz
100 MHz
77 MHz
Access time from CLK
(MAX.)
6 ns
6 ns
6 ns
7 ns
6 ns
6 ns
6 ns
7 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10 Ω ± 10 % of series resistor
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M13049EJ7V0DS00 (7th edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1997



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MC-458CB646
Ordering Information
Part number
Clock frequency
Package
Mounted devices
(MAX.)
MC-458CB646EFB-A80
125 MHz 168-pin Dual In-line Memory Module 4 pieces of µPD45128163G5 (Rev. E)
(Socket Type)
(10.16 mm (400) TSOP (II))
MC-458CB646EFB-A10
100 MHz Edge connector : Gold plated
25.4 mm height
5 MC-458CB646PFB-A80
125 MHz
4 pieces of µPD45128163G5 (Rev. P)
(10.16 mm (400) TSOP (II))
5 MC-458CB646PFB-A10
100 MHz
2 Data Sheet M13049EJ7V0DS00



Part Number MC-458CB646
Description 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Maker NEC - NEC
Total Page 16 Pages
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