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  NEC Electronic Components Datasheet  


MC-4516CB646

16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE


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MC-4516CB646 pdf
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB646
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
Description
The MC-4516CB646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of
128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
Clock frequency and access time from CLK
Part number
/CAS latency
Clock frequency
(MAX.)
Access time from CLK
(MAX.)
MC-4516CB646EF-A80
MC-4516CB646EF-A10
5 MC-4516CB646PF-A80
5 MC-4516CB646PF-A10
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
125 MHz
100 MHz
100 MHz
77 MHz
125 MHz
100 MHz
100 MHz
77 MHz
6 ns
6 ns
6 ns
7 ns
6 ns
6 ns
6 ns
7 ns
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and full page)
Programmable wrap sequence (sequential / interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10 Ω ±10 % of series resistor
Single 3.3 V ± 0.3 V power supply
LVTTL compatible
4,096 refresh cycles/64 ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14334EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999



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MC-4516CB646
Ordering Information
Part number
Clock frequency
MHz (MAX.)
Package
Mounted devices
MC-4516CB646EF-A80
125 MHz
168-pin Dual In-line Memory Module 8 pieces of µPD45128841G5 (Rev. E)
MC-4516CB646EF-A10 100 MHz (Socket Type)
(10.16 mm (400) TSOP (II))
5 MC-4516CB646PF-A80 125 MHz Edge connector : Gold plated
5 MC-4516CB646PF-A10 100 MHz 34.93 mm height
8 pieces of µPD45128841G5 (Rev. P)
(10.16 mm (400) TSOP (II))
2 Data Sheet M14334EJ2V0DS00



Part Number MC-4516CB646
Description 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Maker NEC - NEC
Total Page 16 Pages
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