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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR750

(MBR735 - MBR7150) 7.5 AMPS. Schottky Barrier Rectifiers


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MBR750 pdf
MBR735 - MBR7150
7.5 AMPS. Schottky Barrier Rectifiers
TO-220AC
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
.113(2.87)
.103(2.62)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
.16(4.06)
.14(3.56)
PIN1
2
.037(0.94)
.027(0.68)
.56(14.22)
.53(13.46)
.11(2.79)
.10(2.54)
.205(5.20)
.195(4.95)
PIN 1
PIN 2
.025(0.64)
.014(0.35)
CASE
Cases: JEDEC TO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR MBR MBR MBR MBR MBR
735 745 750 760 790 7100
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM 35 45 50 60 90 100
VRMS 24 31 35 42 63 70
VDC 35 45 50 60 90 100
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
7.5
Peak Repetitive Forward Current (Square Wave, 20KHz) at
Tc=105oC
IFRM
15.0
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=7.5A,Tc=25
IF=7.5A,Tc=125
IF=15A,Tc=25
IF=15A,Tc=125
IFSM
IRRM
VF
1.0
0.57
0.84
0.72
150
0.75
0.65
0.5
0.92
0.82
Maximum Instantaneous Reverse Current @ Tc =25 oC
at Rated DC Blocking Voltage (Note 1) @ Tc=125 oC
IR
0.1
15.0
0.1
10
0.1
5.0
Voltage Rate of Change (Rated VR)
dv/dt
10,000
Typical Junction Capactance
Cj 360 280 200
Maximum Thermal Resistance, (Note 3)
Operating Junction Temperature Range
RθJC
RθJA
TJ
5.0
15.0
-65 to +150
Storage Temperature Range
TSTG
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.
-65 to +175
MBR
7150
150
105
150
0.95
0..92
160
Units
V
V
V
A
A
A
A
V
mA
mA
V/uS
pF
oC/W
oC
oC
Version: A06
Free Datasheet http://www.datasheet4u.com/



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MBR750 pdf
RATINGS AND CHARACTERISTIC CURVES (MBR735 THRU MBR7150)
FIG.1- FORWARD CURRENT DERATING CURVE
10
RESISTIVE OR
INDUCTIVE LOAD
8
6
4
2
MBR735-MBR745
MBR750-MBR7150
0
0 50 100
CASE TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
40
Tj=1250C
10
150
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
Tj=Tj max.
150 8.3ms Single Half Sine Wave
JEDEC Method
125
100
75
50
25
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
50
MBR735-MBR745
MBR750-MBR7150
10
100
Pulse Width=300 s
1% Duty Cycle
1
Tj=250C
0.1
MBR735-MBR745
MBR750-MBR760
MBR790-MBR7150
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
4,000
1,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
Tj=1250C
1
0.1 Tj=750C
0.01
Tj=250C
0.001
0
20 40
60 80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
100
10
100
40
0.1
MBR735-MBR745
MBR750 & MBR760
MBR790-MBR7150
1.0 10
REVERSE VOLTAGE. (V)
1
100
0.1
0.01
0.1
1 10
T, PULSE DURATION. (sec)
100
Version: A06
Free Datasheet http://www.datasheet4u.com/



Part Number MBR750
Description (MBR735 - MBR7150) 7.5 AMPS. Schottky Barrier Rectifiers
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 2 Pages
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