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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR40150PT

(MBR40xxPT) Schottky Barrier Rectifiers



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MBR40150PT pdf
MBR4035PT - MBR40150PT
40.0 AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
www.DataSheet4U.comwheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.17”(4.3mm)from case
Mechanical Data
Cases: JEDEC TO-3P/TO-247AD molded plastic
body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10 in. - lbs. max
Weight: 0.2 ounce, 5.6 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR MBR MBR MBR MBR MBR
4035 4045 4050 4060 4090 40100
PT PT PT PT PT PT
Maximum Recurrent Peak Reverse Voltage
VRRM
35 45 50 60 90 100
Maximum RMS Voltage
VRMS
24 31 35 42 63 70
Maximum DC Blocking Voltage
VDC
35 45 50 60 90 100
Maximum Average Forward Rectified Current
at Tc=125OC
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=120oC
I(AV)
IFRM
40
40
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
330
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=20A, Tc=25oC
IF=20A, Tc=125oC
IF=40A, Tc=25oC
IF=40A, Tc=125oC
IRRM
VF
2.0
0.75
0.65
0.80
0.75
0.77
0.67
1.0
0.84
0.74
MBR
40150
PT
150
105
150
0.95
0.92
1.02
0.98
Units
V
V
V
A
A
A
A
V
Maximum Instantaneous Reverse Current
@ Tc=25 oC at Rated DC Blocking Voltage Per Leg
@ Tc=125 oC (Note 1)
Voltage Rate of Change at (Rated VR)
IR
dV/dt
30
10,000
Typical Thermal Resistance Per Leg (Note 3)
RθJC
Operating Junction Temperature Range
TJ
Storage Temperature Range
TSTG
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg
1.0
20
1,000
1.2
-65 to +150
-65 to +175
0.5
10
mA
mA
V/uS
oC/W
oC
oC
Version: A06



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MBR40150PT pdf
RATINGS AND CHARACTERISTIC CURVES (MBR4035PT THRU MBR40150PT)
FIG.1- FORWARD CURRENT DERATING CURVE
50
RESISTIVE OR
INDUCTIVE LOAD
40
30
20
10
www.DataSheet4U.com0 0
50 100
CASE TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
50
150
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
600
Tj=Tj max.
500
8.3ms Single Half Sine Wave
JEDEC Method
400
300
200
100
0
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
50
10
Tj=1500C
1
Pulse Width=300 s
1% Duty Cycle
Tj=250C
10
Tj=1250C
1
Tj=750C
0.1
0.1 MBR4035PT-MBR4045PT
MBR4050PT & MBR4060PT
MBR4090PT-MBR40150PT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
0.01
Tj=250C
0.001
0
20 40
MBR4035PT-MBR4045PT
MBR4050PT & MBR40100PT
60 80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
10
100
0.1
MBR4035PT-MBR4045PT
MBR4050PT & MBR4060PT
MBR4090PT-MBR40150PT
1 10
REVERSE VOLTAGE. (V)
1
100
0.1
0.01
0.1
1 10
T, PULSE DURATION. (sec)
100
Version: A06



Part Number MBR40150PT
Description (MBR40xxPT) Schottky Barrier Rectifiers
Maker Taiwan Semiconductor Company - Taiwan Semiconductor Company
Total Page 2 Pages
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