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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR30L60CT

Dual Common Cathode Schottky Rectifier


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MBR30L60CT pdf
MBR30L45CT thru MBR30L100CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
MBR
30L45CT
MBR
30L60CT
MBR
30L100CT
Maximum repetitive peak reverse voltage
VRRM
45
60 100
Maximum RMS voltage
VRMS
31
42
70
Maximum DC blocking voltage
VDC 45
60 100
Maximum average forward rectified current
IF(AV)
30
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
IFRM
30
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25
IF=15A, TJ=125
Maximum reverse current @ Rated VR TJ=25
TJ=100
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
220
1
0.55 0.60 0.77
0.50 0.56 0.67
0.40 0.48 0.50
200 150
32
10000
1
- 55 to +150
- 55 to +175
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1309001
Version: K13



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MBR30L60CT pdf
MBR30L45CT thru MBR30L100CT
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
MBR30LxxCT
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE
C0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
TO-220AB
PACKING
50 / Tube
Note 1: "xx" defines voltage from 45V (MBR30L45CT) to 100V (MBR30L100CT)
EXAMPLE
PREFERRED P/N
MBR30L100CT C0
MBR30L100CT C0G
MBR30L100CTHC0
PART NO.
MBR30L100CT
MBR30L100CT
MBR30L100CT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
DESCRIPTION
G Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
25
20
15
10 RESISTIVE OR
INDUCTIVELOAD
5 WITH HEATSINK
0
0 25 50 75 100 125 150
CASE TEMPERATURE (oC)
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
PER LEG
250
8.3ms Single Half Sine Wave
JEDEC Method
200
150
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
30L45CT
10 TJ=125
30L45CT
TJ=25
1
30L60CT-100CT
TJ=125
30L60CT-100CT
TJ=25
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
10 TJ=125
1
0.1
0
TJ=25
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1309001
Version: K13



Part Number MBR30L60CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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