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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR30L120CT

Dual Common Cathode Schottky Rectifier


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MBR30L120CT pdf
MBR30L120CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
MBR30L120CT
Maximum repetitive peak reverse voltage
VRRM
120
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
84
120
Maximum average forward rectified current
IF(AV)
30
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
30
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
200
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25
IF=15A, TJ=125
IF=30A, TJ=25
IF=30A, TJ=125
Maximum reverse current @ rated VR
TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
TYP MAX
0.81 0.88
0.66 0.75
0.89 0.95
0.76 0.82
TYP MAX
1.1 20
1.7 25
10000
3
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
A
V
μA
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308035
Version: G13



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MBR30L120CT pdf
CREAT BY ART
ORDERING INFORMATION
PART NO.
MBR30L120CT
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE GREEN COMPOUND
CODE
C0 Suffix "G"
MBR30L120CT
Taiwan Semiconductor
PACKAGE
TO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N
MBR30L120CT C0
MBR30L120CT C0G
MBR30L120CTHC0
PART NO.
MBR30L120CT
MBR30L120CT
MBR30L120CT
AEC-Q101
QUALIFIED
H
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
DESCRIPTION
G Green compound
AEC-Q101 qualified
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
25
20
15
10
RESISTIVE OR
INDUCTIVELOAD
5 WITH HEATSINK
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE (oC)
225
200
175
150
125
100
75
50
25
0
1
FIG. 2 MAXIMUM FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
10
TJ=125
1
TJ=25
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
10000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
1000
100
TJ=125
10
1
0.1
TJ=25
0.01
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308035
Version: G13



Part Number MBR30L120CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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