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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR3045CT-Y

Dual Common Cathode Schottky Rectifier



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MBR3045CT-Y pdf
MBR3045CT-Y thru MBR30150CT-Y
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
MBR30 MBR30 MBR30 MBR30 MBR30
SYMBOL
45CT-Y 60CT-Y 80CT-Y 100CT-Y 150CT-Y
Marking code
MBR30
45CT
MBR30
60CT
MBR30
80CT
MBR30
100CT
MBR30
150CT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
VRRM
45
60
80 100 150
VRMS
31
42
56
70 105
VDC 45 60 80 100 150
IF(AV)
30
IFRM
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25°C
IF=15A, TJ=125°C
IF=30A, TJ=25°C
IF=30A, TJ=125°C
Maximum reverse current @ rated VR TJ=25°C
TJ=125°C
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
200
1.0 0.5
0.7 0.77
0.6 0.67
0.82 -
0.73 -
0.84
0.70
0.94
0.82
0.2
40 10
7.5
10000
1.0
- 55 to +150
- 55 to +150
0.95
0.92
1.02
0.98
0.1
5
1.5
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
°C/W
°C
°C
Document Number: DS_D1411034
Version: C14



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MBR3045CT-Y pdf
MBR3045CT-Y thru MBR30150CT-Y
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR30xxCT-Y
(Note 1)
PACKING CODE
C0
PACKING CODE
SUFFIX
G
PACKAGE
TO-220AB
Note 1: "xx" defines voltage from 45V (MBR3045CT-Y) to 150V (MBR30150CT-Y)
PACKING
50 / Tube
EXAMPLE
PREFERRED
PART NO.
MBR3060CT-Y C0
MBR3060CT-Y C0G
PART NO.
MBR3060CT-Y
MBR3060CT-Y
PACKING CODE
C0
C0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
35
30
25
20
15
10 RESISTIVE OR
INDUCTIVELOAD
5 WITH HEATSINK
0
0 50 100 150
CASE TEMPERATURE (oC)
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
300
250 8.3ms Single Half Sine Wave
200
150
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
100
MBR3045CT-Y
MBR3060CT-Y
10
1 MBR30150CT-Y
MBR3080CT-Y - 100CT-Y
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
MBR3045CT-Y
MBR3060CT-Y - 150CT-Y
10
TJ=125°C
1
TJ=75°C
0.1
0.01
TJ=25°C
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1411034
Version: C14



Part Number MBR3045CT-Y
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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MBR3045CT-Y pdf
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