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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR30100CT

Dual Common Cathode Schottky Rectifier



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MBR30100CT pdf
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
CT CT CT CT CT CT CT
35 45 50 60 90 100 150
24 31 35 42 63 70 105
35 45 50 60 90 100 150
30
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
30
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25
IF=15A, TJ=125
IF=30A, TJ=25
IF=30A, TJ=125
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1.0
0.7
0.6
0.82
0.73
15
1.0
200
0.77
0.67
-
-
0.2
10
10000
- 55 to +150
- 55 to +150
0.5
0.84
0.70
0.94
0.82
7.5
1.5
A
A
0.95
0.92
1.02
0.98
0.1
5
V
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308040
Version: J13



No Preview Available !

MBR30100CT pdf
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
PACKING CODE GREEN COMPOUND
CODE
MBR30xxCT
Prefix "H"
C0
Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR3035CT) to 150V (MBR30150CT)
PACKAGE
TO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N
MBR3060CT C0
MBR3060CT C0G
MBR3060CTHC0
PART NO.
MBR3060CT
MBR3060CT
MBR3060CT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
35
30
25
20
15
10 RESISTIVE OR
INDUCTIVELOAD
5 WITH HEATSINK
0
0 50 100 150
CASE TEMPERATURE (oC)
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
100
MBR3035CT-MBR3045CT
MBR3050CT-MBR3060CT
10
1 MBR30150CT
MBR3090CT-MBR30100CT
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
300
8.3ms Single Half Sine Wave
250 JEDEC Method
200
150
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
100
10
1
0.1
0.01
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
MBR3035CT-MBR3045CT
MBR3050CT-MBR30150CT
TJ=125
TJ=75
TJ=25
0.001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308040
Version: J13



Part Number MBR30100CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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