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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR2560CT

Dual Common Cathode Schottky Rectifier



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MBR2560CT pdf
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 2535 2545 2550 2560 2590 25100 25150
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
CT CT CT CT CT CT CT
35 45 50 60 90 100 150
24 31 35 42 63 70 105
35 45 50 60 90 100 150
25
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
IFRM
25
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=12.5A, TJ=25
IF=12.5A, TJ=125
IF=25A, TJ=25
IF=25A, TJ=125
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
-
-
0.82
0.73
0.2
15
200
0.5
0.75
0.65
-
-
0.2
10
10000
1.0
- 55 to +150
- 55 to +150
0.85
0.75
0.92
0.88
0.1
7.5
A
A
0.95
0.92
1.02
0.98
0.1
5
V
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308065
Version: I13



No Preview Available !

MBR2560CT pdf
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR25xxCT
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE
C0
GREEN COMPOUND
CODE
Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR2535CT) to 150V (MBR25150CT)
PACKAGE
TO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N
MBR2560CT C0
MBR2560CT C0G
MBR2560CTHC0
PART NO.
MBR2560CT
MBR2560CT
MBR2560CT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
DESCRIPTION
G Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
30
25
20
15
10
RESISTIVE OR
5 INDUCTIVELOAD
WITH HEATSINK
0
0 50 100
CASE TEMPERATURE (oC)
150
250
225
200
175
150
125
100
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL INSTATANEOUS FORWARD
CHARACTERISTICS PER LEG
100
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
10
TJ=125
1
TJ=25
Pulse Width=300μs
1% Duty Cycle
0.1
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2590CT-MBR25150CT
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
10
TJ=125
1
TJ=25
0.1
0.01
0.001
0
MBR2535CT-MBR2545CT
MBR2550CT-MBR25150CT
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308065
Version: I13



Part Number MBR2560CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor Company - Taiwan Semiconductor Company
Total Page 4 Pages
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