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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR25100CT-Y

Dual Common Cathode Schottky Rectifier


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MBR25100CT-Y pdf
MBR2545CT-Y thru MBR25150CT-Y
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR
MBR
MBR
MBR
PARAMETER
SYMBOL 2545
2560
25100 25150
CT-Y
CT-Y
CT-Y
CT-Y
Marking code
MBR25
45CT
MBR25
60CT
MBR25
100CT
MBR25
150CT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
VRRM
VRMS
VDC
IF(AV)
IFRM
45
31
45
60 100
42 70
60 100
25
25
150
105
150
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=12.5A, TJ=25
IF=12.5A, TJ=125
IF=25A, TJ=25
IF=25A, TJ=125
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
-
-
0.82
0.73
0.2
15
0.5
0.75 0.85
0.65 0.75
- 0.92
- 0.88
0.2 0.1
10 7.5
10000
1
- 55 to +150
- 55 to +150
0.95
0.92
1.02
0.98
0.1
5
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1405044
Version: A14



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MBR25100CT-Y pdf
MBR2545CT-Y thru MBR25150CT-Y
Taiwan Semiconductor
ORDERING INFORMATION
PART NO. PACKING CODE
MBR25xxCT-Y
(Note 1)
C0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
TO-220AB
Note 1: "xx" defines voltage from 45V (MBR2545CT-Y) to 150V (MBR25150CT-Y)
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR2560CT-Y C0 MBR2560CT-Y
MBR2560CT-Y C0G MBR2560CT-Y
PACKING CODE
C0
C0
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
30
25
20
15
10
RESISTIVE OR
5 INDUCTIVELOAD
WITH HEATSINK
0
0 50 100
CASE TEMPERATURE (oC)
150
250
225
200
175
150
125
100
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL INSTATANEOUS FORWARD
CHARACTERISTICS PER LEG
100
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
10
TJ=125
1
TJ=25
Pulse Width=300μs
0.1 1% Duty Cycle
MBR2545CT-Y
MBR2560CT-Y
MBR25100CT-Y-150CT-Y
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
10
TJ=125
1
0.1 TJ=25
0.01
0.001
0
MBR2545CT-Y
MBR2560CT-Y-150CT-Y
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1405044
Version: A14



Part Number MBR25100CT-Y
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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MBR25100CT-Y pdf
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