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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR20L120CT

Dual Common Cathode Schottky Rectifier



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MBR20L120CT pdf
MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
MBR20L100CT
MBR20L120CT
Maximum repetitive peak reverse voltage
VRRM
100
120
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
70
100
84
120
Maximum average forward rectified current
IF(AV)
20
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
20
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF= 10A, TJ=25
IF= 10A, TJ=125
IF= 20A, TJ=25
IF= 20A, TJ=125
Maximum reverse current @ rated VR
TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
TYP MAX TYP MAX
0.72 0.75 0.78 0.83
0.58 0.68 0.63 0.72
0.81 0.85 0.86 0.90
0.67 0.75 0.73 0.80
TYP MAX TYP MAX
1.10 20 1.00 20
1.20 15 1.40 10
10000
2.8 3.0
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
A
V
μA
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308038
Version: G13



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MBR20L120CT pdf
MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
PACKING
CODE
GREEN COMPOUND
CODE
MBR20L1xxCT
Prefix "H"
C0
Suffix "G"
Note 1: "xx" defines voltage from 100V (MBR20L100CT) to 120V (MBR20L120CT)
PACKAGE
TO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR20L100CT C0
MBR20L100CT C0G
MBR20L100CTHC0
MBR20L100CT
MBR20L100CT
MBR20L100CT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
DESCRIPTION
G Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
25
MBR20L100CT
20
15
MBR20L120CT
10
5 RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
0 25 50
75
100 125
CASE TEMPERATURE (oC)
150
175
150
125
100
75
50
25
0
1
FIG. 2 MAXIMUM FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
MBR20L100CT
MBR20L120CT
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
TJ=125
10
TJ=25
1
0.1
0
MBR20L100CT
MBR20L120CT
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
10000
1000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=125
100
10 TJ=25
1
0.1
MBR20L100CT
MBR20L120CT
0.01
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308038
Version: G13



Part Number MBR20L120CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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