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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR2060CT

Dual Common Cathode Schottky Rectifier



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MBR2060CT pdf
MBR2035CT thru MBR20200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 2035 2045 2050 2060 2090 20100 20150 20200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
CT CT CT CT CT CT CT CT
35 45 50 60 90 100 150 200
24 31 35 42 63 70 105 140
35 45 50 60 90 100 150 200
20
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
20
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=10A, TJ=25
IF=10A, TJ=125
IF=20A, TJ=25
IF=20A, TJ=125
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
150
1 0.5
A
A
- 0.80 0.85 0.99
0.57 0.70 0.75 0.87 V
0.84 0.95 0.95 1.23
0.72 0.85 0.85 1.10
0.1
mA
15 10
5 0.15
10000
1.0 2.0
- 55 to +150
- 55 to +150
V/μs
OC/W
OC
OC
Document Number: DS_D1308039
Version: L13



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MBR2060CT pdf
MBR2035CT thru MBR20200CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
PACKING CODE GREEN COMPOUND
CODE
MBR20xxCT
Prefix "H"
C0
Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR2035CT) to 200V (MBR20200CT)
PACKAGE
TO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR2060CT C0
MBR2060CT C0G
MBR2060CTHC0
MBR2060CT
MBR2060CT
MBR2060CT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
DESCRIPTION
G Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
24
20
16
12
8
RESISTIVE OR
4 INDUCTIVELOAD
WITH HEATSINK
0
0 50 100
CASE TEMPERATURE (oC)
150
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
100
150
125
100
75
50
25
0
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
10
TJ=125
1
TJ=25
MBR2035CT-2045CT
MBR2050CT-2060CT
0.1
MBR20100CT
MBR20150CT-200CT
Pulse Width=300μs
1% Duty Cycle
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
10
TJ=125
1
TJ=75
0.1
0.01
0.001
0
TJ=25
MBR2035CT-2045CT
MBR2050CT-20100CT
MBR20150CT-20200CT
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308039
Version: L13



Part Number MBR2060CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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MBR2060CT pdf
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