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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR1690

Schottky Barrier Rectifier


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MBR1690 pdf
MBR1635 thru MBR16150
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Schottky Barrier Rectifier
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.86 g (approximately)
TO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
MBR MBR MBR MBR MBR MBR MBR
SYMBOL
1635 1645 1650 1660 1690 16100 16150
Maximum repetitive peak reverse voltage
VRRM 35 45 50 60 90 100 150
Maximum RMS voltage
Maximum DC blocking voltage
VRMS 24 31 35 42 63 70 105
VDC 35 45 50 60 90 100 150
Maximum average forward rectified current
IF(AV)
16
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
32
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=16A, TJ=25
IF=16A, TJ=125
IRRM
1.0
VF 0.63
0.57
0.5 A
0.75 0.85 0.95 V
0.65 0.75 0.92
Maximum reverse current @ rated VR TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJC
TJ
TSTG
0.5
15
0.5
10
10000
3
- 55 to +150
- 55 to +150
0.3
7.5
0.1 mA
5
V/μs
OC/W
OC
OC
Document Number: DS_D1308053
Version: J13



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MBR1690 pdf
MBR1635 thru MBR16150
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR16xx
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE GREEN COMPOUND
CODE
C0 Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR1635) to 150V (MBR16150)
PACKAGE
TO-220AC
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N
MBR1660 C0
MBR1660 C0G
MBR1660HC0
PART NO.
MBR1660
MBR1660
MBR1660
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
20
16
12
8
RESISTIVE OR
4 INDUCTIVE LOAD
WITH HEATSINK
0
0 50 100
CASE TEMPERATURE (oC)
150
350
300
250
200
150
100
50
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
TJ=125
10
1
Pulse Width=300μs
1% Duty Cycle
TJ=25
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=125
1
TJ=25
0.1
0.1 MBR1635-MBR1645
MBR1650-MBR1660
MBR1690-MBR16150
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
0.01
0.001
0
MBR1635-MBR1645
MBR1650-MBR16150
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308053
Version: J13



Part Number MBR1690
Description Schottky Barrier Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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