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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR1550CT

Dual Common Cathode Schottky Rectifier


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MBR1550CT pdf
MBR1535CT thru MBR15150CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 1535 1545 1550 1560 1590 15100 15150
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
CT CT CT CT CT CT CT
35 45 50 60 90 100 150
24 31 35 42 63 70 105
35 45 50 60 90 100 150
15
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
15
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=7.5A, TJ=25
IF=7.5A, TJ=125
IF=15A, TJ=25
IF=15A, TJ=125
IFSM
IRRM
VF
1
-
0.57
0.84
0.72
150
0.75
0.65
-
-
0.5
0.92
0.82
-
-
A
A
1.05
0.92 V
-
-
Maximum reverse current @ rated VR
Voltage rate of change (Rated VR)
TJ=25
TJ=125
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJC
RθJA
TJ
TSTG
0.5
10
0.3
7.5
10000
1.5
10
- 55 to +150
- 55 to +150
0.1
5.0
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308062
Version: H13



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MBR1550CT pdf
MBR1535CT thru MBR15150CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR15xxCT
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING
CODE
C0
GREEN COMPOUND
CODE
Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR1535CT) to 150V (MBR15150CT)
PACKAGE
TO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR1560CT C0
MBR1560CT C0G
MBR1560CTHC0
MBR1560CT
MBR1560CT
MBR1560CT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
20
15
10
5 RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
0 50 100
CASE TEMPERATURE (oC)
150
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
100
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
300
250
8.3ms Single Half Sine Wave
JEDEC Method
200
150
100
50
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
TJ=125
10
MBR15150CT
1
TJ=25
Pulse Width=300μs
0.1 1% Duty Cycle
MBR1535CT-MBR1545CT
MBR1550CT-MBR1560CT
MBR1590CT-MBR15100CT
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
10
TJ=125
1
0.1
0.01
0.001
0
TJ=75
MBR1535CT-MBR1545CT
MBR1550CT-MBR15150CT
TJ=25
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308062
Version: H13



Part Number MBR1550CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor Company - Taiwan Semiconductor Company
Total Page 4 Pages
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