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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR10L100CT

Dual Common Cathode Schottky Rectifier


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MBR10L100CT pdf
MBR10L100CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
MBR10L100CT
Maximum repetitive peak reverse voltage
VRRM
100
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
70
100
Maximum average forward rectified current
IF(AV)
10
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
10
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
120
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF= 5A, TJ=25
IF= 5A, TJ=125
IF=10A, TJ=25
IF=10A, TJ=125
Maximum reverse current @ rated VR
TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
TYP MAX
0.73 0.76
0.59 0.65
0.82 0.85
0.66 0.71
TYP MAX
0.30 20
0.50 15
10000
2.8
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
A
V
μA
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308037
Version: G13



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MBR10L100CT pdf
CREAT BY ART
ORDERING INFORMATION
PART NO.
MBR10L100CT
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE GREEN COMPOUND
CODE
C0 Suffix "G"
MBR10L100CT
Taiwan Semiconductor
PACKAGE
TO-220AB
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR10L100CT C0
MBR10L100CT C0G
MBR10L100CTHC0
MBR10L100CT
MBR10L100CT
MBR10L100CT
AEC-Q101
QUALIFIED
H
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
12
10
8
6
4 RESISTIVE OR
INDUCTIVE LOAD
2 WITH HEATSINK
0
0 25 50 75 100 125 150
CASE TEMPERATURE (oC)
PACKING CODE
C0
C0
C0
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
AEC-Q101 qualified
FIG. 2 MAXIMUM FORWARD SURGE
CURRENT
175
8.3ms Single Half Sine Wave
150 JEDEC Method
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=125
1
TJ=25
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
10000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
1000
100
TJ=125
10
1
0.1
TJ=25
0.01
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308037
Version: G13



Part Number MBR10L100CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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