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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR10H100CT

Dual Common Cathode Schottky Rectifier



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MBR10H100CT pdf
MBR10H100CT thru MBR10H200CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.88 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
MBR
10H100CT
MBR
10H150CT
MBR
10H200CT
Maximum repetitive peak reverse voltage
VRRM
100
150
200
Maximum RMS voltage
VRMS
70
105 140
Maximum DC blocking voltage
VDC 100 150 200
Maximum average forward rectified current
IF(AV)
10
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
10
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
120
Peak repetitive reverse surge current (Note 1)
IRRM
1.0
0.5
Maximum instantaneous forward voltage (Note 2)
IF= 5A, TJ=25
0.85
IF= 5A, TJ=125
VF 0.75
IF=10A, TJ=25
0.95
IF=10A, TJ=125
0.85
0.88
0.75
0.97
0.85
Maximum reverse current @ rated VR
TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJC
TJ
TSTG
5
1
10000
1.5
- 55 to +175
- 55 to +175
UNIT
V
V
V
A
A
A
A
V
μA
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308059
Version: I13



No Preview Available !

MBR10H100CT pdf
MBR10H100CT thru MBR10H200CT
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
MBR10HxxxCT
(Note)
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE GREEN COMPOUND
CODE
C0 Suffix "G"
PACKAGE
TO-220AB
PACKING
50 / Tube
Note 1: "xxx" defines voltage from 100V (MBR10H100CT) to 200V (MBR10H200CT)
EXAMPLE
PREFERRED P/N PART NO.
MBR10H100CT C0
MBR10H100CT C0G
MBR10H100CTHC0
MBR10H100CT
MBR10H100CT
MBR10H100CT
AEC-Q101
QUALIFIED
H
PACKING CODE
C0
C0
C0
GREEN COMPOUND DESCRIPTION
CODE
G Green compound
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
12
10
8
6
4
RESISTIVE OR
2
INDUCTIVELOAD
WITH HEATSINK
0
0 25 50 75 100 125 150
CASE TEMPERATURE (oC)
175
180
150
120
90
60
30
0
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
1000
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
TJ=125
10
TJ=25
1
0.1
0
0.2 0.4 0.6 0.8
1
FORWARD VOLTAGE (V)
1.2 1.4
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
10
1
0.1
0.01
TJ=125
TJ=75
0.001
TJ=25
0.0001
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308059
Version: I13



Part Number MBR10H100CT
Description Dual Common Cathode Schottky Rectifier
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 4 Pages
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