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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  


MBR1040CT

Schottky Barrier Rectifiers



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MBR1040CT pdf
MBR1030CT THRU MBR10200CT
Features
10.0 AMPS. Schottky Barrier Rectifiers
Voltage Range
30 to 200 Volts
Current
10.0 Amperes
TO-220
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220A molded plastic body
Terminals: Lead solderable per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR MBR MBR MBR MBR MBR MBR MBR MBR Units
1030 1035 1040 1045 1050 1060 1010 1015 1020
CT CT CT CT CT CT 0CT 0CT 0CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
VRRM
VRMS
VDC
I(AV)
30 35 40 45 50 60 100 150 200
21 24 28 31 35 42 70 105 140
30 35 40 45 50 60 100 150 200
10
V
V
V
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
IFRM
32
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=5A, TC=25oC
IF=5A, TC=125oC
Maximum Instantaneous Reverse Current
@ Tc =25at Rated DC Blocking Voltage
(Note 2)
IFSM
IRRM
VF
IR
0.70
0.57
0.1
120
0.5
0.80
0.65
A
A
0.85 0.88 0.99 V
0.75 0.78 0.87
0.8 0.2 mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Maximum Typical Thermal Resistance (Note 3) RθJC
1.5 /W
Operating Junction Temperature Range
TJ
-65 to +150
Storage Temperature Range
TSTG
-65 to +175
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.
- 128 -



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MBR1040CT pdf
RATINGS AND CHARACTERISTIC CURVES (MBR1030CT THRU MBR10200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
6
RESISTIVE OR
INDUCTIVE LOAD
5
4
3
2
1
0
0 50 100
CASE TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
40
Tj=250C
MBR1050CT-MBR1060CT
10
150
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
180
150 Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
120
90
60
30
0
0.1
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
50
100
10
Tj=1250C
MBR1030CT-MBR1045CT
1
MBR10100CT
1
Tj=750C
0.1
MBR10150CT
0.1
MBR10200CT
0.01
0
Pulse Width=300 s
1% Duty Cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
5,000
0.01
Tj=250C
0.001
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS
PER LEG
100
1,000
500
Tj=250C
f=1.0MHz
Vsig=50mVp-p
10.0
1
100
0.1
1.0 10
REVERSE VOLTAGE. (V)
0.1
100
0.01
0.1
1 10
T, PULSE DURATION. (sec)
100
- 129 -



Part Number MBR1040CT
Description Schottky Barrier Rectifiers
Maker Taiwan Semiconductor - Taiwan Semiconductor
Total Page 2 Pages
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