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Elite Semiconductor Memory Technology
Elite Semiconductor Memory Technology


M13S2561616A

4M x 16 Bit x 4 Banks Double Data Rate SDRAM



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Revision History
Revision 0.1 (28 Apr. 2006)
- Original
Revision 1.0 (07 Jun. 2006)
- Delete Preliminary at ever page
- Revise typing error of page1
Revision 1.1 (09 May. 2007)
- Modify PD, DC specifications and MRS
Revision 1.2 (12 Jun. 2007)
- Modify tDQSS
Revision 1.3 (13 Jul. 2007)
- Add -4 speed grade
M13S2561616A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.3
1/48



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M13S2561616A pdf
ESMTwww.DataSheet4U.com
DDR SDRAM
Features
M13S2561616A
4M x 16 Bit x 4 Banks
Double Data Rate SDRAM
z JEDEC Standard
z Internal pipelined double-data-rate architecture, two data access per clock cycle
z Bi-directional data strobe (DQS)
z On-chip DLL
z Differential clock inputs (CLK and CLK )
z DLL aligns DQ and DQS transition with CLK transition
z Quad bank operation
z CAS Latency : 2; 2.5; 3
z Burst Type : Sequential and Interleave
z Burst Length : 2, 4, 8
z All inputs except data & DM are sampled at the rising edge of the system clock(CLK)
z Data I/O transitions on both edges of data strobe (DQS)
z DQS is edge-aligned with data for reads; center-aligned with data for WRITE
z Data mask (DM) for write masking only
z VDD = 2.3V ~ 2.7V, VDDQ = 2.3V ~ 2.7V
z VDD = 2.6V ~ 2.8V, VDDQ = 2.6V ~ 2.8V (only for speed -4)
z Auto & Self refresh
z 7.8us refresh interval
z SSTL-2 I/O interface
z 66pin TSOPII package
Ordering information :
PRODUCT NO.
M13S2561616A -4TG
M13S2561616A -5TG
M13S2561616A -6TG
MAX FREQ
250MHz
200MHz
166MHz
VDD
2.7V
2.5V
PACKAGE
TSOPII
TSOPII
COMMENTS
Pb-free
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2007
Revision : 1.3
2/48



Part Number M13S2561616A
Description 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
Maker Elite Semiconductor Memory Technology - Elite Semiconductor Memory Technology
Total Page 30 Pages
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M13S2561616A 4M x 16 Bit x 4 Banks Double Data Rate SDRAM M13S2561616A
Elite Semiconductor Memory Technology
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