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Elite Semiconductor
Elite Semiconductor


M12L32162A

1M x 16Bit x 2Banks Synchronous DRAM


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M12L32162A pdf
ESMT
Preliminary
Revision History
Revision 0.1 (Aug. 11 2006)
- Original
Revision 0.2 (Mar. 20 2007)
- Add BGA package
Revision 0.3 (Apr. 27 2007)
- Rename BGA pin name (BA1 to NC; BA0 to BA)
- Modify DC Characteristics
www.DataSheet4U.com
M12L32162A
Elite Semiconductor Memory Technology Inc.
Publication Date : Apr. 2007
Revision : 0.3
1/29



No Preview Available !

M12L32162A pdf
ESMT
SDRAM
Preliminary
M12L32162A
1M x 16Bit x 2Banks
Synchronous DRAM
FEATURES
z JEDEC standard 3.3V power supply
z LVTTL compatible with multiplexed address
z Dual banks operation
z MRS cycle with address key programs
- CAS Latency (2 & 3 )
www.DataSheet4U-.comBurst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
z All inputs are sampled at the positive going edge of the
system clock
z Burst Read Single-bit Write operation
z DQM for masking
z Auto & self refresh
z 64ms refresh period (4K cycle)
GENERAL DESCRIPTION
The M12L32162A is 33,554,432 bits synchronous high
data rate Dynamic RAM organized as 2 x 1,048,576 words
by 16 bits, fabricated with high performance CMOS
technology. Synchronous design allows precise cycle
control with the use of system clock I/O transactions are
possible on every clock cycle. Range of operating
frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of
high bandwidth, high performance memory system
applications.
ORDERING INFORMATION
Part NO.
M12L32162A-7TG
M12L32162A-7BG
MAX Freq.
143MHz
143MHz
PACKAGE COMMENTS
54PIN
TSOP(II)
50 Ball BGA
Pb-free
Pb-free
PIN CONFIGURATION (TOP VIEW)
54 PIN TSOP(II)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
NC
BA
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54 VSS
53 DQ15
52 VSSQ
51 DQ14
50 DQ13
49 VDDQ
48 DQ12
47 DQ11
46 VSSQ
45 DQ10
44 DQ9
43 VDDQ
42 DQ8
41 VSS
40 NC
39 UDQM
38 CLK
37 CKE
36 NC
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
54 Ball FVBGA(8mmx8mm)
12345 6789
A VSS DQ15 VSSQ
VDDQ DQ0 VDD
B DQ14 DQ13 VDDQ
VSSQ DQ2 DQ1
C DQ12 DQ11 VSSQ
VDDQ DQ4 DQ3
D DQ10 DQ9 VDDQ
VSSQ DQ6 DQ5
E DQ8 NC VSS
F UDQM CLK CKE
G NC A11 A9
H A8 A7 A6
J
VSS A5
A4
VDD LDQM DQ7
CAS RAS WE
BA NC CS
A0 A1 A10
A9 A2 VDD
Elite Semiconductor Memory Technology Inc.
Publication Date : Apr. 2007
Revision : 0.3
2/29



Part Number M12L32162A
Description 1M x 16Bit x 2Banks Synchronous DRAM
Maker Elite Semiconductor - Elite Semiconductor
Total Page 29 Pages
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